Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects

Döhrmann, S.; Hägele, D.; Rudolph, J.; Bichler, M.; Schuh, D.; Oestreich, Michael

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Döhrmann, S.; Hägele, D.; Rudolph, J.; Bichler, M.; Schuh, D.; Oestreich, M.: Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects. In: Physical Review Letters 93 (2004), Nr. 14, No. 147405. DOI: https://doi.org/10.1103/PhysRevLett.93.147405

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2089

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Abstract:
The anisotropic spin dephasing in (110) quantum wells (QW) from 6 K up to room temperature was investigated. It was found that intersubband scattering constitutes a new spin dephasing mechanism that is necessary to explain reduced spin lifetimes at elevated temperatures for electron spins along (110). The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along (110). The modification and total suppression of spin oscillations through anisotropic spin dephasing was also analyzed. © American Physical Society
License of this version:	Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2004
Keywords english:	Crystal growth, Electromagnetic wave polarization, Gallium compounds, Magnetic anisotropy, Magnetic field effects, Photoluminescence, Semiconductor doping, Electron spin decoherence, Intersubband effects, Multiple quantum well (MQW), Spin relaxation mechanism, Semiconductor quantum wells
DDC:	530 \| Physik