Pb nanowires on vicinal Si(111) surfaces: Effects of refacetting on transport

Zur Kurzanzeige

dc.identifier.uri http://dx.doi.org/10.15488/1915
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1940
dc.contributor.author Tegenkamp, Christoph
dc.contributor.author Lükermann, Daniel
dc.contributor.author Akbari, Shima
dc.contributor.author Czubanowski, Marcin
dc.contributor.author Schuster, Annemarie
dc.contributor.author Pfnür, Herbert
dc.date.accessioned 2017-09-14T10:52:26Z
dc.date.available 2017-09-14T10:52:26Z
dc.date.issued 2010
dc.identifier.citation Tegenkamp, C.; Lükermann, D.; Akbari, S.; Czubanowski, M.; Schuster, A.; Pfnür, H.: Pb nanowires on vicinal Si(111) surfaces: Effects of refacetting on transport. In: Physical Review B - Condensed Matter and Materials Physics 82 (2010), Nr. 20, No. 205413. DOI: https://doi.org/10.1103/PhysRevB.82.205413
dc.description.abstract The conductance of Pb wires grown by self-assembly on Si(557) has been studied in detail as a function of coverage and of the facet structure. Only for 1.31 ML, corresponding to one physical monolayer on the terraces (steps not covered with Pb), and a perfectly ordered wire array along the [¯1¯12] direction quasi-one-dimensional (1D) transport along the [1¯10] direction is found, corroborating the model of one-dimensional band filling in an adsorbate induced (223) facet structure. The transport results recently shown by Morikawa et al. [Phys. Rev. B 82, 045423 (2010)] can also reproduced by our group. In contrast to what was claimed by them, our results clearly show that either a too small coverage or structural imperfections of the surface are responsible for a metal-insulator transition around 140 K irrespective of the crystallographic direction. The variety of different transport scenarios found is caused by strong adsorbate-induced refacetting into an electronically stabilized (223) orientation, which differs from the macrosocopic orientation of the substrate. The crucial interplay between structure and filling factor explains the extremely small parameter window in which the 1D transport channel can be observed. © 2010 The American Physical Society. eng
dc.language.iso eng
dc.publisher College Park, MD : American Physical Society
dc.relation.ispartofseries Physical Review B - Condensed Matter and Materials Physics 82 (2010), Nr. 20
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject.ddc 530 | Physik ger
dc.title Pb nanowires on vicinal Si(111) surfaces: Effects of refacetting on transport
dc.type article
dc.type Text
dc.relation.issn 10980121
dc.relation.doi https://doi.org/10.1103/PhysRevB.82.205413
dc.bibliographicCitation.issue 20
dc.bibliographicCitation.volume 82
dc.bibliographicCitation.firstPage 205413
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


Die Publikation erscheint in Sammlung(en):

Zur Kurzanzeige

 

Suche im Repositorium


Durchblättern

Mein Nutzer/innenkonto

Nutzungsstatistiken