dc.identifier.uri |
http://dx.doi.org/10.15488/1202 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1226 |
|
dc.contributor.author |
Gogolin, Ralf
|
|
dc.contributor.author |
Zielke, Dimitri
|
|
dc.contributor.author |
Lövenich, Wilfried
|
|
dc.contributor.author |
Sauer, Rüdiger
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.date.accessioned |
2017-03-17T10:51:54Z |
|
dc.date.available |
2017-03-17T10:51:54Z |
|
dc.date.issued |
2016 |
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dc.identifier.citation |
Gogolin, R.; Zielke, D.; Lövenich, W.; Sauer, R.; Schmidt, J.: Silicon Heterojunction Solar Cells Combining an a-Si:H (n) Electron-collector with a PEDOT:PSS Hole-collector. In: Energy Procedia 92 (2016), S. 638-643. DOI: https://doi.org/10.1016/j.egypro.2016.07.030 |
|
dc.description.abstract |
We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiOx tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiOx layer grown within a couple of minutes leads to low J0 values ranging between (80 - 130) fA/cm2, allowing for Voc values of ∼690 mV. Implementation of this PEDOT:PSS/SiOx/c-Si junctions into solar cells with phosphorus-diffused n+ front results in low series resistance values of only 0.6 Ωcm2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiOx/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher Voc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the Voc values of this first batch were already above 650 mV. |
eng |
dc.description.sponsorship |
State of Lower Saxony |
|
dc.description.sponsorship |
German Federal Ministry of Economics and Energy/0325884A |
|
dc.language.iso |
eng |
|
dc.publisher |
London : Elsevier Ltd. |
|
dc.relation.ispartofseries |
Energy Procedia 92 (2016) |
|
dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
dc.subject |
heterojunction |
eng |
dc.subject |
interface preparation |
eng |
dc.subject |
organic-silicon junction |
eng |
dc.subject |
PEDOT:PSS |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Efficiency |
eng |
dc.subject |
Electric resistance |
eng |
dc.subject |
Heterojunctions |
eng |
dc.subject |
Interfaces (materials) |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Silicon oxides |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Substrates |
eng |
dc.subject |
Electron collectors |
eng |
dc.subject |
Heterojunction cells |
eng |
dc.subject |
Hole selective layers |
eng |
dc.subject |
PEDOT:PSS |
eng |
dc.subject |
Series resistance values |
eng |
dc.subject |
Silicon heterojunctions |
eng |
dc.subject |
Silicon junction |
eng |
dc.subject |
Conducting polymers |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Silicon Heterojunction Solar Cells Combining an a-Si:H (n) Electron-collector with a PEDOT:PSS Hole-collector |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2016.07.030 |
|
dc.bibliographicCitation.volume |
92 |
|
dc.bibliographicCitation.firstPage |
638 |
|
dc.bibliographicCitation.lastPage |
643 |
|
tib.accessRights |
frei zug�nglich |
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