dc.identifier.uri |
http://dx.doi.org/10.15488/1197 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1221 |
|
dc.contributor.author |
Gemmel, Catherin
|
|
dc.contributor.author |
Hensen, Jan
|
|
dc.contributor.author |
Kajari-Schröder, Sarah
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-03-17T10:51:52Z |
|
dc.date.available |
2017-03-17T10:51:52Z |
|
dc.date.issued |
2016 |
|
dc.identifier.citation |
Gemmel, C.; Hensen, J.; Kajari-Schröder, S.; Brendel, R.: Lifetime Analysis for Defect Characterization in Kerfless Epitaxial Silicon from the Porous Silicon Process. In: Energy Procedia 92 (2016), S. 29-36. DOI: https://doi.org/10.1016/j.egypro.2016.07.006 |
|
dc.description.abstract |
Kerfless epitaxial silicon from the porous silicon (PSI) process is a promising alternative for standard wafers. They allow the reduction of PV costs by combining high material quality at reduced production costs. We evaluate the minority carrier lifetime of p-type and n-type epitaxial silicon layers fabricated with the PSI process by means of photoconductance decay measurements. For p-type layers we observe a strong injection dependence of the lifetime that we attribute to bulk Shockley-Read-Hall (SRH) recombination. We determine two limiting defects K3.6 and K157 that describe the injection dependence of 9 samples grown in one batch. Defect K3.6 has a symmetry factor of k=3.6 and is similarly concentrated in all 9 investigated samples. Its concentration decreases upon high temperature processing with and without phosphorous diffusion. The defect K157 has a symmetry factor of k=157 and a higher concentration in samples with a higher porosity in the starting layer. As a consequence of the k-factors being larger than unity the identified defects are less detrimental in n-type silicon than p-type silicon. Accordingly, we fabricate n-type epitaxial layers for which we measure effective lifetimes up to 1330±130 μs at Δp = 1015 cm –3. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
London : Elsevier Ltd. |
|
dc.relation.ispartofseries |
Energy Procedia 92 (2016) |
|
dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
dc.subject |
kerfless |
eng |
dc.subject |
lifetime |
eng |
dc.subject |
mono-epitaxy |
eng |
dc.subject |
Shockley-Read-Hall |
eng |
dc.subject |
silicon |
eng |
dc.subject |
symmetry factor |
eng |
dc.subject |
Carrier lifetime |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Defects |
eng |
dc.subject |
Porous silicon |
eng |
dc.subject |
Semiconducting silicon |
eng |
dc.subject |
Defect characterization |
eng |
dc.subject |
High-temperature processing |
eng |
dc.subject |
Minority carrier lifetimes |
eng |
dc.subject |
Shockley read halls |
eng |
dc.subject |
Shockley-Read-Hall recombinations |
eng |
dc.subject |
Symmetry factors |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Lifetime Analysis for Defect Characterization in Kerfless Epitaxial Silicon from the Porous Silicon Process |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2016.07.006 |
|
dc.bibliographicCitation.volume |
92 |
|
dc.bibliographicCitation.firstPage |
29 |
|
dc.bibliographicCitation.lastPage |
36 |
|
tib.accessRights |
frei zug�nglich |
|