dc.identifier.uri |
http://dx.doi.org/10.15488/1149 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1173 |
|
dc.contributor.author |
Gatz, Sebastian
|
|
dc.contributor.author |
Bothe, Karsten
|
|
dc.contributor.author |
Müller, Jens
|
|
dc.contributor.author |
Dullweber, Thorsten
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-02-23T13:12:47Z |
|
dc.date.available |
2017-02-23T13:12:47Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Gatz, S.; Bothe, K.; Müller, J.; Dullweber, T.; Brendel, R.: Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells. In: Energy Procedia 8 (2011), S. 318-323. DOI: https://doi.org/10.1016/j.egypro.2011.06.143 |
|
dc.description.abstract |
In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet = 600 cm/s on 1.5 Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a nonuniform back surface field and a Smet of 2000 cm/s on the same material. We achieve an area-averaged rear surface recombination velocity S rear = (65 ± 20) cm/s for line contacts with a pitch of 2 mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2 % with a Voc = 655 mV and a Jsc = 38.4 mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear = (70 ± 30) cm/s which is in agreement with our lifetime results. Applying fine line screenprinting, efficiencies up to 19.4 % are demonstrated. |
eng |
dc.description.sponsorship |
German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety/0327529A |
|
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartof |
1st International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2011, April 17-20 2011, Freiburg, Germany |
|
dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Photovoltaics |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Aluminum contacts |
eng |
dc.subject |
Aluminum paste |
eng |
dc.subject |
Back surface fields |
eng |
dc.subject |
Contact geometry |
eng |
dc.subject |
Decay measurements |
eng |
dc.subject |
Dielectric surface |
eng |
dc.subject |
High efficiency |
eng |
dc.subject |
Internal quantum efficiency |
eng |
dc.subject |
Line contact |
eng |
dc.subject |
P-type |
eng |
dc.subject |
P-type silicon |
eng |
dc.subject |
Photoconductance |
eng |
dc.subject |
Photovoltaics |
eng |
dc.subject |
Rear surfaces |
eng |
dc.subject |
Screen-printed |
eng |
dc.subject |
Screen-printed solar cells |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Surface recombination velocities |
eng |
dc.subject |
Surface recombinations |
eng |
dc.subject |
Test wafers |
eng |
dc.subject |
Aluminum |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Efficiency |
eng |
dc.subject |
Nanostructured materials |
eng |
dc.subject |
Optimization |
eng |
dc.subject |
Passivation |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Semiconducting silicon compounds |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject |
Surfaces |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.143 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
318 |
|
dc.bibliographicCitation.lastPage |
323 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|