dc.identifier.uri |
http://dx.doi.org/10.15488/1004 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1028 |
|
dc.contributor.author |
Lehr, Martin
|
|
dc.contributor.author |
Heinemeyer, Frank
|
|
dc.contributor.author |
Eidelloth, Stefan
|
|
dc.contributor.author |
Brendemühl, Till
|
|
dc.contributor.author |
Kiefer, Fabian
|
|
dc.contributor.author |
Münster, Daniel
|
|
dc.contributor.author |
Lohse, Anja
|
|
dc.contributor.author |
Berger, Miriam
|
|
dc.contributor.author |
Braun, Nadja
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2016-12-22T11:58:58Z |
|
dc.date.available |
2016-12-22T11:58:58Z |
|
dc.date.issued |
2013 |
|
dc.identifier.citation |
Lehr, M.; Heinemeyer, F.; Eidelloth, S.; Brendemühl, T.; Kiefer, F.; et al.: How to obtain solderable Al/Ni:V/Ag contacts. In: Energy Procedia 38 (2013), S. 375-379. DOI: https://doi.org/10.1016/j.egypro.2013.07.292 |
|
dc.description.abstract |
We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%. |
eng |
dc.description.sponsorship |
BMUB/VaCoC/0325195A |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier |
|
dc.relation |
info:eu-repo/grantAgreement/BMUB/VaCoC/0325195A |
eng |
dc.relation |
info:eu-repo/grantAgreement/EC/FP7/615233 |
eng |
dc.relation.ispartofseries |
Energy Procedia 38 (2013) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Evaporated aluminum |
eng |
dc.subject |
Metallization |
eng |
dc.subject |
Silicon solar cell |
eng |
dc.subject |
Solderability |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
600 | Technik
|
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
How to obtain solderable Al/Ni:V/Ag contacts |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
18766102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2013.07.292 |
|
dc.bibliographicCitation.volume |
38 |
|
dc.bibliographicCitation.firstPage |
375 |
|
dc.bibliographicCitation.lastPage |
379 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|