dc.identifier.uri |
http://dx.doi.org/10.15488/1000 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1024 |
|
dc.contributor.author |
Kajari-Schröder, Sarah
|
|
dc.contributor.author |
Käsewieter, Jörg
|
|
dc.contributor.author |
Hensen, Jan
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2016-12-22T11:22:42Z |
|
dc.date.available |
2016-12-22T11:22:42Z |
|
dc.date.issued |
2013 |
|
dc.identifier.citation |
Kajari-Schröder, S.; Käsewieter, J.; Hensen, J.; Brendel, R.: Lift-off of free-standing layers in the kerfless porous silicon process. In: Energy Procedia 38 (2013), S. 919-925. DOI: https://doi.org/10.1016/j.egypro.2013.07.365 |
|
dc.description.abstract |
We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity layer serves as a mechanically weak layer for lift-off and consists of widely spaced silicon bridges with thicknesses of 40-100 nm. The low width leads to a 33-fold stress enhancement in the bridges, making them break when a force is applied while the epitaxial layer and the substrate remain intact. We perform the free-standing lift-off with a curved vacuum chuck. A vacuum pressure of 0.2 bar is sufficient for controlled peeling off of the 30-50 um thick silicon layers. We simulate the stresses and the displacements of the epitaxial layer in the lift-off process close to the first non-broken bridge. We demonstrate the defect-free lift-off of 8 of 9 of 9 × 9 cm2 layers from 6" substrates. |
eng |
dc.description.sponsorship |
Renewable Energy Corporation |
|
dc.language.iso |
eng |
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dc.publisher |
Amsterdam : Elsevier |
|
dc.relation.ispartofseries |
Energy Procedia 38 (2013) |
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dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Kerfless wafering |
eng |
dc.subject |
Layer transfer |
eng |
dc.subject |
Lift-off |
eng |
dc.subject |
Porous silicon |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
600 | Technik
|
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Lift-off of free-standing layers in the kerfless porous silicon process |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
18766102 |
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dc.relation.doi |
https://doi.org/10.1016/j.egypro.2013.07.365 |
|
dc.bibliographicCitation.volume |
38 |
|
dc.bibliographicCitation.firstPage |
919 |
|
dc.bibliographicCitation.lastPage |
925 |
|
dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|