This paper describes a development of a microtransformer device fabricated using thin film technology. The device is designed for higher switching frequencies beyond to 50 MHz power applications. A especially by the microtransformer is a design, which allows wide flexibility of a device by choosing a different values of an inductance and of a windings ratio. The microtransformer device is integrated on silicon substrate consisting of a closed magnetic core and six coils. Both, primary and secondary device side consist three coils. Therefore, this design allows using of a device for different switching frequencies. As a magnetic material for transformer core a permalloy NiFe45/55 was chosen.