A method to derive the emitter saturation current density J0e with lateral resolution is applied to investigate selective emitter structures. The method uses PL lifetime imaging at several injection densities to laterally evaluate J0e by applying the method of Kane and Swanson [1] pixel by pixel. Samples with two-sided diffused emitters on lowlydoped Cz wafers were used to produce selective emitter structures by laser doping of the phosphorus-rich glass (LDSE). By comparison of experimental and numerical simulation results of J0e linescans, a limited resolution of a feature size of an inhomogeneous emitter is determined to be theoretically between 0.5-1.0 mm and experimentally about 2 mm. The method was successfully applied to investigate the dependence of J0e on the laser power of a selective emitter structure. The expected behaviour of a maximum J0e for medium laser intensities is observed. The method is suitable to evaluate the selective emitter process and its optimization.