In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon ...

In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. ...

We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different ...

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...

We investigate a hierarchical surface structuring process to reduce the optical reflectance of monocrystalline Si solar cells to below the reflectance of state-of-the-art alkaline texturing. First, alkaline texturing is ...

High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should ...

The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance ...

Epitaxially grown semiconductor quantum dots are promising candidates for pure single photon and polarization-entangled photon pair emission. Excellent optical properties can typically be ensured only if these so-called ...